Theodoros Serghiou of the University of Glasgow’s James Watt School of Engineering led the development of the EGOFET. He said ...

The Japanese AIST Group (consisting of National Institute of Advanced Industrial Science and Technology and AIST Solutions) ...

Compound Semiconductor™ is an Angel Business Communications publication.

Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy savings in power supplies across a wide range of applications. Also included ...

To improve the durability of tin perovskite, a method called Ruddlesden-Popper (RP) has been proposed that introduces large ...

Scientists from the French research organisation CEA-Leti presented three papers at Photonics West 2025 detailing the ...

Tunable lasing at around 405 nm is realised with an InGaN device featuring a narrow-ridge active channel and a periodically ...

Nimy Resources, a mining company, has entered into a collaboration with mineral supply chains firm M2i Global to secure a ...

Lumentum has announced that Michael Hurlston has been appointed president and CEO and as a director of the company, effective ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...