KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...
Irvine, Calif. – The IGBT-7 Series of 1200-volt insulated gate bipolar transistor modules from Toshiba America Electronic Components tout higher operating frequency and reliability in general inverter ...
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The MG1200GXH1US61 PMI has been launched by Toshiba Electronics Europe. It is a high-current 4500V, 1200A power module for use in rail traction, industrial motor control, renewable energy systems and ...
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