SAN JOSE, Calif. — Grandis Inc.–a developer of spin transfer torque random access memory (STT-RAM) technology–has announced a 300-mm magnetic tunnel junction (MTJ) fabrication facility at its ...
SAN JOSE, Calif. — Hynix Semiconductor Inc. and Grandis Inc. have signed a license agreement for memory products involving Grandis' patents and intellectual property (IP) in the spin-transfer ...
At the first MRAM Developers Day over 100 people gathered to discuss the current state and future of Magnetic Random Access Memory. New products using MRAM, MRAM product solutions and projections for ...
Alexander Driskill-Smith, Senior Director of Strategic Memory Planning at Samsung Electronics, talks to AZoM about the Samsung open innovation program in STT-MRAM (SGMI), STT-MRAM technology and ...
Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in terms of read/write speed, low power consumption and non-volatility, but there has not been a demonstration of high density ...
Samsung Electronics has announced it is to acquire Grandis, a specialist in spin transfer torque random access memory (STT-RAM). Grandis will be merged into Samsung R&D operations that are focused on ...
Non-volatile memories such as flash memory are transforming data centers, client computers and consumer applications. They have led to new interfaces and developments in software that take advantage ...
SOT-RAM, a promising type of next-generation magnetic memory, could pave the way to ultra-low-power electronics. However, scientists have identified a source of disturbance during the read operation ...
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