KAWASAKI, Japan, August 28, 2025--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched three 650V silicon carbide (SiC) MOSFETs equipped with its latest [1] 3rd ...
Ampere and STMicroelectronics (STM) announced the next step in their strategic co-operation, starting in 2026, with a multi-year agreement between STMicroelectronics and Renault Group (RNLSY) on the ...
The stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by 1-fold, SiC power modules allow for ...
STMicroelectronics has introduced five silicon carbide (SiC) MOSFET-based high-power modules for electric vehicles (EV) that improve performance and driving range. The new SiC power modules cover a ...
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