RIVERSIDE, Calif. — A team at the University of California, Riverside Bourns College of Engineering has developed a novel way to build what many see as the next generation memory storage devices for ...

(Nanowerk Spotlight) Researchers have been keenly interested in leveraging the useful properties of crystalline nanoporous materials for electronic applications. Ordered frameworks such as ...

Resistive random-access memory (RRAM) is a highly attractive form of RAM, as it promises low-power usage with stable long-term storage, even in the absence of external power. Finding the right ...

Cambridge scientists have developed a new prototype for computer memory that could make for faster chips that could hold up to 100 times more data. The system is made up of barium bridges between ...

A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge ...