In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...

It is anticipated that within just a few decades, the surging volume of digital data will constitute one of the world's largest energy consumers. Now, researchers at Chalmers University of Technology, ...

Researchers from UC Berkeley, among other institutions, have found that magnetic data stored on computer chips could be switched quickly, opening up opportunities for future computer chip memory.

SOT-RAM, a promising type of next-generation magnetic memory, could pave the way to ultra-low-power electronics. However, scientists have identified a source of disturbance during the read operation ...

Researchers showed that relatively simple structures can support exponential number of magnetic states -- much greater than previously thought -- and demonstrated switching between the states by ...