Furthermore, error-prevention mechanisms such as Wear Leveling (WL), Read Disturb Management (RDM), Near-Miss ECC, and Dynamic Data-Refresh (DDR) work together to manage the efficient and reliable ...

Micron Technology introduced a line of NAND flash memory products today that it says will lengthen the lifespan of solid-state storage by integrating error management ...

Austin, TX - June 9, 2010 - Cyclic Design (cyclicdesign.com) announces the availability of its G14X BCH ECC solution for NAND flash applications. The G14X IP is an extension of the G14 IP that enables ...

NAND flash memory underpins a vast array of modern electronic devices, yet its increasing storage densities and shrinking semiconductor geometries have exacerbated ...

As with any electronic system, errors in the memory subsystem are possible due to design failures/defects or electrical noise in any one of the components. These errors are classified as either ...

LONDON — Engineers from Franco-Italian chip maker STMicroelectronics and South Korea’s Hynix Semiconductor Inc. have unveiled details of a 4-Gbit NAND flash memory that transfers data at 36 Mbytes per ...

Communication-system designers have always had to deal with trade-offs among data reliability, efficient use of available spectrum, data throughput, and cost. Error-correction coding (ECC) is one of ...

What options do developers have when it comes to embedded NAND flash storage? There are three basic approaches to using embedded NAND flash storage What options do developers have when it comes to ...