These four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes R DS(on) and switching losses to maximize efficiency, especially in soft-switching applications, Qorvo said. In ...

The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...

Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...

A stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by one-fold, SiC power modules allow for ...

MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...

Comparison between DOT-247 and Discrete Products Two topologies offered in standardized 2-in-1 modules: half-bridge and common-source, offering increased flexibility. The DOT-247’s unique dual TO-247 ...

What advantages do SiC power modules offer versus silicon IGBTs? A gate-driver family that helps make the switch to these SiC modules. The introduction of Microchip Technologies' 1,700-V ...

The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. October 16th, 2019 - By: Wolfspeed, a Cree Company With the shift ...

Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...

Ideal for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The DOT-247’s unique dual TO-247 structure enables the integration of larger chips that were previously ...