A layout-dependent circuit-design model from Toshiba helps boost gate density and improve cost-performance in next-generation 45-nm CMOS technology. More specifically, 45-nm CMOS gate density can be 2 ...

Toshiba explained that by applying this technique, gate density for 45-nm CMOS technology is boosted to 2.6 times higher than that of 65-nm CMOS technology, and surpasses the typical gain of 2 times ...

Silicon Labs introduced the industry's first digital CMOS-based drop-in replacement solution for optocoupler-isolated gate drivers (opto-drivers). Supporting up to 5 kV isolation ratings and up to 10 ...

Density and speed of IC’s have increased exponentially for several decades, following a trend described by Moore’s Law. While it is accepted that this exponential improvement trend will end, it is ...

The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D and E, HF and RF applications at up to 30 MHz, as well as other applications. The ...

Any typical digital design style with CMOS uses complementary pairs of p-type and n-type MOSFETs for logic functions implementation. Naturally, CMOS always ought to provide INVERTED outputs like ...

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...