GaN-inspired advances in on-board battery chargers. How AlGaN/GaN HEMTs deliver high switching frequencies. Buck converter reference design for 48-V apps that leverages GaN FETs. Electric vehicles ...
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...
Gallium nitride transistors rely on a ‘two-dimensional electron gas’ for their high speed – a flat heterojunction between GaN and AlGaN where electrons can move extremely quickly – they are ‘high ...
Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
Aluminium gallium nitride is an alloy of aluminium nitride and gallium nitride with useful semiconductor properties. When grown on GaN, it gives rise to fixed charges at the interface stemming from ...
Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...